TEM evaluation of defects in GaAs/InAs 3D-layer/GaAs heterostructures grown by molecular beam epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 773-776

  Ueda, Osamu ^a   Nakata, Yoshiaki ^a   Muto, Shunichi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); DISSOCIATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION LOOPS; MULTIPLE INTRINSIC STACKING FAULTS; V SHAPED DISLOCATIONS;

HETEROJUNCTIONS;

EID: 0032296415     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)