Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature

Applied Physics Letters

Volumn 88, Issue 24, 2006, Pages

  Dhara, S ^a   Magudapathy, P ^a   Kesavamoorthy, R ^a   Kalavathi, S ^a   Sastry, V S ^a   Nair, K G M ^a   Hsu, G M ^b   Chen, L C ^b   Chen, K H ^b,d   Santhakumar, K ^c   Soga, T ^c  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAM CURRENT; NITROGEN ION BEAM SYNTHESIS; POWER-DEPENDENT PHOTOLUMINESCENCE;

ANNEALING; CRYSTAL STRUCTURE; GROWTH (MATERIALS); ION BEAMS; PHOTOLUMINESCENCE; RAMAN SCATTERING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 33745212894     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2186101     Document Type: Article

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