Optical characterization of GaN by N+ implantation into GaAs at elevated temperature

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Dhara, S ^a   Magudapathy, P ^a   Kesavamoorthy, R ^a   Kalavathi, S ^a   Nair, K G M ^a   Hsu, G M ^b   Chen, L C ^b   Chen, K H ^b,d   Santhakumar, K ^c   Soga, T ^c  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLOGRAPHY; ION IMPLANTATION; RAMAN SCATTERING; THERMAL EFFECTS; ZINC ALLOYS;

ELEVATED TEMPERATURE; GAN PHASES; INTERMEDIATE BAND-GAP VALUE; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE STUDY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 29744457942     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2099542     Document Type: Article

References (15)

1. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
2. J. H. Edgar, J. Mater. Res. 7, 235 (1992).
3. S. Dhara, A. Datta, C. W. Hsu, C. T. Wu, C. H. Shen, Z. H. Lan, K. H. Chen, L. C. Chen, Y. L. Wang, and C. C. Chen, Appl. Phys. Lett. 84, 5473 (2004) and references therein.
4. X. W. Lin, M. Behar, R. Maltez, W. Swider, Z. Liliental-Weber, and J. Washburn, Appl. Phys. Lett. 67, 2699 (1995).
5. K. Kuriyama, H. Kondo, N. Hayashi, M. Ogura, M. Hasegawa, and N. Kobayashi, Y. Takahashi, and S. Watanabe, Appl. Phys. Lett. 79, 2546 (2001).
6. O. Kubaschewski and C. B. Alcock, Metallurgical Termochemistry, 5th ed. (Pergamon, New York, 1979).
7. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985); http://www.srim.org/
8. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985); http://www.srim.org/
9. Joint Committee of Powder Diffraction Standards (JCPDS) Card Nos. 32-0389 for GaAs, 02-1078 for h-GaN, and 80-0011 for c-GaN.
10. C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, H. L. Liu, J. J. Wu, K. H. Chen, L. C. Chen, J. Y. Peng, and Y. F. Chen, J. Am. Chem. Soc. 123, 2791 (2001).
11. V. Y. Davydov, Y. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, Phys. Rev. B 58, 12899 (1998).
12. C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J. W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, Phys. Rev. B 54, 17745 (1996).
13. H. Yaguchi, J. Wu, B. Zhang, Y. Segawa, H. Nagasawa, K. Onabe, and Y. Shiraki, J. Cryst. Growth 195, 323 (1998).
14. Z. Z. Bandic, T. C. McGill, and Z. Ikonic, Phys. Rev. B 56, 3564 (1997).
15. S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, Y. F. Chen, C. W. Hsu, L. C. Chen, H. M. Lin, and C. C. Chen, Appl. Phys. Lett. 84, 3486 (2004).