Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale

Applied Physics Letters

Volumn 70, Issue 9, 1997, Pages 1161-1163

  Kasu, Makoto ^a   Makimoto, Toshiki ^a   Kobayashi, Naoki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007332140     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118513     Document Type: Article

References (12)

1. See for example, M. A. Kastner, Phys. Today , 24 (1993); R. C. Ashoori, Nature (London) 379, 413 (1996).
2. See for example, M. A. Kastner, Phys. Today , 24 (1993); R. C. Ashoori, Nature (London) 379, 413 (1996).
3. R. Notzel, J. Temmyo, and T. Tamamura, Nature (London) 369, 131 (1994).
4. T. Fukui, S. Ando, Y. Tokura, and T. Toriyama, Appl. Phys. Lett. 58, 2018 (1991).
5. S. Yoshida, M. Sasaki, and H. Kawanishi, J. Cryst. Growth 136, 37 (1994).
6. M. Kasu, T. Makimoto, and N. Kobayashi (unpublished).
7. D. P. Adams, T. M. Mayer, and B. S. Swartzentruber, Appl. Phys. Lett. 68, 2210 (1996).
8. T.-C. Shen, C. Wang, and J. R. Tucker, Proceedings of NATO-ARW Atomic and Molecular Wires, Les Houches, France, May 1996 (Kluwer, Amsterdam, to be published).
9. M. Kasu, T. Makimoto, and N. Kobayashi, Appl. Phys. Lett. 68, 1811 (1996).
10. T. Makimoto and N. Kobayashi, Appl. Phys. Lett. 67, 548 (1995).
11. T. Makimoto and N. Kobayashi, Solid State Electron, (to be published).
12. See Fig. 1(b) in Ref. 8.