Reaction mechanism of trilevel resist etching in O2/SO2 plasma: Controlling factors for sidewall passivation

Vacuum

Volumn 51, Issue 4, 1998, Pages 519-524

  Ha, J H ^a   Yi, D H ^a   Kim, J J ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARBON MONOXIDE; CHEMICAL BONDS; NITROGEN; OXYGEN; PASSIVATION; REACTION KINETICS; SULFUR DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

RESIST ETCHING;

PLASMA ETCHING;

EID: 0032310830     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00244-9     Document Type: Article

References (4)

1. Kornblit, A., Grieco, M., Peters, D. and Saunders, T., Proc. SPIE, 1987, 775, 321.
2. Pons, M., Pelletier, J. and Joubert, O., J. Appl. Phys., 1994, 75, 4709.
3. Jurgensen, C. W., Hutton, R. S. and Taylor, G. N., J. Vac. Sci. Technol. B, 1992, 10, 2542.
4. Hotton, R. S., Boyce, C. H. and Taylor, G. N., J. Vac. Sci. Technol. B, 1995, 13, 2366.