Electronic properties of Si/SiGe/Ge heterostructures

Physica Scripta T

Volumn 68, Issue , 1996, Pages 68-71

  Abstreiter, Gerhard ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; ENERGY GAP; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

BAND GAP; BAND OFFSET; CONDUCTION BAND; ELECTRON MOBILITY; HOLE MOBILITY; VALENCE BAND;

HETEROJUNCTIONS;

EID: 0030410273     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/1996/t68/009     Document Type: Article

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