Ion beam mixing of silicon-germanium thin films

Journal of Electronic Materials

Volumn 34, Issue 5, 2005, Pages 468-473

  Abedrabbo, Sufian ^a,b   Arafah, D E ^a   Salem, S ^a  

^a UNIVERSITY OF JORDAN   (Jordan)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Ion beam mixing; Layered structures; Rutherford backscattering spectrometry (RBS); Silicon germanium (Si Ge); Thin films

Indexed keywords

CMOS INTEGRATED CIRCUITS; GERMANIUM; ION BEAMS; MIXING; PHYSICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ALLOYS; SOLAR CELLS;

ION BEAM MIXING; LAYERED STRUCTURES; RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS); SILICON-GERMANIUM (SI-GE);

THIN FILMS;

EID: 20344393616     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0053-1     Document Type: Conference Paper

References (43)

1. Gerhard Abstreiter, Physica Scripta T68, 68 (1968).
2. L.M. Koschier, S.R. Wenham, and M.A. Green, IEEE Trans. Electron. Dev. 46, 2111 (1999).
3. Solid State Technol., 45, 52 (2002).
4. Electronic News (www.e-insite.net/electronicnews, Feb. 6, 2003).
5. S.A. Edmiston, A.B. Sproul, M.A. Green, and S.R. Wenham, Progr. Photovoltaics 3, 333 (1995).
6. S.R. Wenham, Progr. Photovoltaics 2, 181 (1994).
7. S.A. Healy and M.A. Green, Solar Energy Mater. Solar Cells 28, 273 (1992).
8. T.L. Chu, S.S. Chu, J. Britt, C. Ferekides, C. Wang, C.Q. Wu, and H.S. Ullal, IEEE Electron Dev. Lett. 13, 303 (1992).
9. A. Blakers, K Weber, M. Stokes, J. Babaei, V. Everett, M. Kerr, and P. Verlinden (Paper presented at 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, August 3-6, 2003), pp. 3-6, (National Renewable Energy Laboratory) NREL.
10. W. Mulligan and R. Swanson (Paper presented at 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, August 3-6, 2003), pp. 30-38, (National Renewable Energy Laboratory) NREL.
11. E. Borne, J.P. Boyeaux, and A. Laugier, 1st World Conf. and Exhib. on Photovoltaic Solar Energy Conversion (NJ: IEEE 1994), pp. 1637-1639.
12. J.M. Ruiz and J. Casado, 13th Eur. Photovoltaic Solar Energy Conf. (Bedford, UK: H.S. Stephens and Associates, 1995), pp. 315-1318.
13. D.-E. Arafah and R. Ahmad-Bitar, Semiconductor Sci. Technol. 13, 322 (1998).
14. R. Ahmad-Bitar and D.-E. Arafah, Solar Energy Mater. Solar Cells 51, 83 (1998).
15. D.-E. Arafah, N.M. Masoud, Int. Atomic Energy Agency (IAEA) (2003), B198, 64-72.
16. R. People, Phys. Rev. B 32, 1405 (1985).
17. J. Xu, S. Miyazaki, and M. Hirose, J. Non-Crystalline Solids 208, 277 (1996).
18. X. Deng, X. Liao, S. Han, H. Povolny, and P. Agarwal, Solar Energy Mater. Solar Cells 62, 89 (2000).
19. T. Fromherz and G. Bauer, in Properties of Strained and Relaxed Silicon Germanium, ed. E. Kasper (INSPEC, 1994), pp. 87-93.
20. J. Casado and J.M. Ruiz, 13th Eur. Photovoltaic Solar Energy Conf. (Bedford, UK: H.S. Stephens and Associates, 1995), pp. 1311-1314.
21. J. Konle, H. Presting, H. Kibbel, and R. Sauer, Solid-State Electron. 45, 1921 (2001).
22. J. Konle, H. Presting, and H. Kibbel, Physica E. 16, 596 (2003).
23. M.E. Gueunier, J.P. Kleider, P. Chatterjee, P.R. Cabarrocas, and Y. Poissant, Thin Solid Films 427, 247 (2003).
24. J.K. Rath, F.D. Tichelaar, and R.E.I. Schropp, Solar Energy Mater. Solar Cells 74, 553 (2002).
25. S. Hazra, A.R. Middya, and S. Ray, J. Non-Crystalline Solids 211, 22 (1997).
26. J. Zahler, C.G. Ahn, S. Zaghi, H. Atwater, and C. Chu, Thin Solid Films 403-404, 558 (2002).
27. C. Eisele, M. Berger, M. Nerding, H.P. Strunk, C.E. Nebel, and M. Stutzmann, Thin Solid Films 427, 176 (2003).
28. Surface Science: Principles and Current Applications, eds. R.J. MacDonald, E.C. Taglauer, and K.R. Wandelt (Berlin: Springer-Verlag, 1996).
29. Ion Bombardment and Modification of Surfaces, eds. O. Aucillo and R. Kelly (Amsterdam: Elsevier, 1984).
30. N.M. Masoud and D.-E. Arafah, Phys. Status Solidi (a), 172, 155 (1999).
31. N.M. Masoud and D.-E. Arafah, Nucl. Instrum. Methods Res. B198, 64 (2003).
32. A. Miotello and R. Kelly, Surf. Sci. 314, 275 (1994), and references therein.
33. 2, ed. R.A.B. Devine (New York: Plenum Press, 1987), p. 279.
34. N.N. Gerasimenko (private communication) (2004).
35. S. Salem (Master's Thesis, University of Jordan, 2003).
36. J.F. Ziegler, J.P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (New York: Pergamon Press, 2003).
37. J.F. Ziegler, Handbook of the Range Distributions of Energetic Ions in All Elements (New York: Pergamon Press, 1980).
38. J.F. Ziegler, Ion Implantation - Science and Technology 2002 (IIT Press).
39. W.K. Chu, J.W, Mayer, and M.A. Nicolet, Backscattering Spectrometry (New York: Academic Press, 1978).
40. M. Ueda, A.F. Beloto, and H. Reuther, J. Appl. Phys. 86, 4821 (1999).
41. H. Tong, R.Y. Fu, and D. Tang, J. Appl. Phys. 92, 2284 (2002).
42. T. Oates and M. Bilek: J. Appl. Phys. 92, 2980 (2002).
43. S. Wolf: Silicon Processing for VLSI ERA, 2nd ed. (Sunset Beach, CA: Lattice Press, 2000), pp. 371-433.