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Journal of Applied Physics

Volumn 91, Issue 4, 2002, Pages 2443-2448

Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films

(5) Choi, W K a Natarajan, A a Bera, L K a Wee, A T S a Liu, Y J a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL BREAKDOWN; GE CONCENTRATIONS; OXIDE BREAKDOWN; OXIDE GROWTH; PILE-UPS; POLYCRYSTALLINE SILICON GERMANIUMS; POLYCRYSTALLINE-SI; RADIO FREQUENCIES; RAPID THERMAL OXIDATION;

GERMANIUM OXIDES; INTERFACES (MATERIALS); OXIDE FILMS; PHOTOELECTRONS; PILES; POLYSILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM;

EID: 33845440473 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1431435 Document Type: Article

Times cited : (8)

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