Ferrimagnetic Mn4N(111) layers grown on 6H-SiC(0001) and GaN(0001) by reactive molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Dhar, S ^a   Brandt, O ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FERRIMAGNETIC MATERIALS; GALLIUM NITRIDE; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

EPITAXIAL FILMS; FERROMAGNETIC LAYERS; SPINTRONICS; SUBSTRATE TEMPERATURE;

MANGANESE COMPOUNDS;

EID: 18044392052     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1884748     Document Type: Article

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