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Volumn 21, Issue 6, 2003, Pages 2466-2470
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Evaluation of the cleanliness of the ion-assisted Mo-Si deposition process for extreme ultraviolet lithography
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Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
COMPOSITION;
COMPUTATIONAL METHODS;
COMPUTER SIMULATION;
CRYSTALLOGRAPHY;
ETCHING;
FREQUENCIES;
ION BEAM ASSISTED DEPOSITION;
LIGHT SCATTERING;
MULTILAYERS;
PERTURBATION TECHNIQUES;
PUMPING (LASER);
SUBSTRATES;
SURFACE ROUGHNESS;
ULTRAVIOLET RADIATION;
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY;
HIGH-SPATIAL FREQUENCY ROUGHNESS;
MULTILAYER FILMS;
LITHOGRAPHY;
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EID: 0942278368
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1615979 Document Type: Article |
Times cited : (4)
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References (8)
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