MOS-Junction-based nanostructures by thermal oxidation of silicon wires for hydrogen detection

IEEE Transactions on Nanotechnology

Volumn 3, Issue 2, 2004, Pages 287-292

  Tibuzzi, Arianna ^a   Margesin, Benno ^b   Decarli, Massimiliano ^a   Di Natale, Corrado ^c   Zen, Mario ^b   D'Amico, Arnaldo ^c   Soncini, Giovanni ^a  

^a UNIVERSITY OF TRENTO   (Italy)

^b FONDAZIONE BRUNO KESSLER   (Italy)

^c UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Hydrogen; Micromachining; MOS junction; Nanowires; Oxidation

Indexed keywords

CHEMICAL SENSORS; DIFFUSION; EVAPORATION; MATHEMATICAL MODELS; MICROMACHINING; MOS CAPACITORS; NANOSTRUCTURED MATERIALS; PALLADIUM; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SIGNAL TO NOISE RATIO; THERMAL EFFECTS; THERMOOXIDATION;

MICROFABRICATIONS; MOS JUNCTION; SILICON NANOWIRES; WORK FUNCTION (WF);

SEMICONDUCTING SILICON;

EID: 2942715195     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2004.828545     Document Type: Article

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