Spectroscopic investigation of porous GaAs prepared by laser-induced etching

Journal of Non-Crystalline Solids

Volumn 352, Issue 21-22, 2006, Pages 2236-2242

  Mavi, H S ^a   Islam, S S ^b   Kumar, Rajesh ^a   Shukla, A K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b JAMIA MILLIA ISLAMIA CENTRAL UNIVERSITY   (India)

Author keywords

Luminescence; Nanoparticles; Raman spectroscopy

Indexed keywords

ETCHING; LASER BEAM EFFECTS; PHOTOLUMINESCENCE; PHOTONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ANALYSIS;

NANOCRYSTALS; NANOPARTICLES; QUANTUM CONFINEMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33744522754     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.02.046     Document Type: Article

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