Characterization of GaAs wire crystals grown on porous silicon by Raman scattering

Journal of Applied Physics

Volumn 82, Issue 12, 1997, Pages 6247-6250

  Da Silva, S W ^a   Lubyshev, D I ^a   Basmaji, P ^a   Pusep, Yu A ^b   Pizani, P S ^b   Galzerani, J C ^b   Katiyar, R S ^c   Morell, G ^c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

^c UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); POINT DEFECTS; POROUS SILICON; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES;

EXCITATION RADIATIONS; NEAR SURFACE; RAMAN ACTIVITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031367581     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366511     Document Type: Article

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