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Volumn 16, Issue 2, 1998, Pages 490-493

Layer-by-layer etching of GaAs (110) with halogenation and pulsed-laser irradiation

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0032397215     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581048     Document Type: Article
Times cited : (13)

References (20)
  • 1
    • 0004142850 scopus 로고
    • edited by D. J. Ehrlich and J. Y. Tsao Academic, San Diego, and references therein
    • See C. I. H. Ashby and J. Y. Tsao, Laser Microfabrication, edited by D. J. Ehrlich and J. Y. Tsao (Academic, San Diego, 1989), and references therein.
    • (1989) Laser Microfabrication
    • Ashby, C.I.H.1    Tsao, J.Y.2
  • 14
    • 0000968748 scopus 로고
    • J. C. Patrin and J. H. Weaver, Phys. Rev. B 48, 17 913 (1993); J. C. Patrin, Y. Z. Li, M. Chander, and J. H. Weaver, Appl. Phys. Lett. 62, 1277 (1993).
    • (1993) Phys. Rev. B , vol.48 , pp. 17913
    • Patrin, J.C.1    Weaver, J.H.2
  • 17
    • 0042718528 scopus 로고    scopus 로고
    • C. Y. Cha, J. Brake, B. Y. Han, D. W. Owens, and J. H. Weaver, J. Vac. Sci. Technol. B 15, 605 (1997): B. Y. Han, C. Y. Cha, and J. H. Weaver, Phys. Rev. B 56, 4966 (1997).
    • (1997) Phys. Rev. B , vol.56 , pp. 4966
    • Han, B.Y.1    Cha, C.Y.2    Weaver, J.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.