Surface morphology and formation of GaAs nanocrystals by laser-induced etching: SEM, PL and Raman studies

Materials Science and Engineering: B

Volumn 107, Issue 2, 2004, Pages 148-154

  Mavi, H S ^a   Shukla, A K ^a   Chauhan, B S ^b   Islam, S S ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b JAMIA MILLIA ISLAMIA CENTRAL UNIVERSITY   (India)

Author keywords

GaAs; Nanostructures; Photoluminescence; Raman scattering

Indexed keywords

ETCHING; LASER APPLICATIONS; MOLECULAR VIBRATIONS; NANOSTRUCTURED MATERIALS; NEODYMIUM LASERS; NONLINEAR OPTICS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPECTRUM ANALYSIS; SYNTHESIS (CHEMICAL);

EXCITATION ENERGY; QUANTUM CONFINEMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1242332374     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.101     Document Type: Article

References (27)

1. Canham L.T. Appl. Phys. Lett. 57:1990;1046.
2. Kanemitsu Y., Tanaka H., Kushida T., Min K.S., Atwater H.A. J. Appl. Phys. 86:1999;1762.
3. Ngan L., Lee K.C., Cheah K.W. J. Appl. Phys. 83:1998;1637.
4. Mavi H.S., Rasheed B.G., Shukla A.K., Abbi S.C., Jain K.P. J. Phys. D. 34:2001;292.
5. Noguchi N., Suemune I. Appl. Phys. Lett. 62:1993;1429.
6. Yamamoto N., Sumiya A., Takai H. Mater. Sci. Eng. B. 69-70:2000;205.
7. Han B.Y., Cha C.Y., Weaver J.H. J. Vac. Sci. Technol. A. 16:1998;490.
8. Cha C.Y., Han B.Y., Weaver J.H. Surf. Sci. 381:1997;L636.
9. Takai M., Hara S., Lee C., Kinomurra A., Lohner T. Nucl. Instrum. Methods B. 85:1994;752.
10. Svorcik V., Rybka V. Chem. Phys. Lett. 164:1989;549.
11. Podlesnik D.V., Gilgen H.H., Osgood R.M. Jr. Appl. Phys. Lett. 48:1986;496.
12. Pavesi L., Guzzi M. J. Appl. Phys. 75:1994;4779.
13. Ashoken R., Jain K.P., Mavi H.S., Balkanski M. J. Appl. Phys. 60:1986;1985.
14. Grilli E., Guzzi M., Zamboni R., Pavesi L. Phys. Rev. B. 45:1992;1638.
15. Perriere J., Millon E., Chamarro M., Morcrette M., Andreazza C. Appl. Phys. Lett. 78:2001;2949.
16. Kanemitsu Y., Tanaka H., Kushida T., Min K.S., Atwater H.A. Physica E. 7:2000;322.
17. Kanemitsu Y., Tanaka H., Mimura S., Kushida T. J. Lumin. 83:1999;301.
18. Kanemitsu Y., Tanaka H., Fukunishi Y., Kushida T., Min K.S., Atwater H.A. Phys. Rev. B. 62:2000;5100.
19. Ding R., Wang H. Mater. Chem. Phys. 77:2002;841.
20. Finnie C.M., Li X., Bohn P.W. J. Appl. Phys. 86:1999;4997.
21. Sabataityte J., Simkiene I., Bendorius R.A., Grigoras K., Jasutis V., Pacebutas V., Tvardauskas H., Navdzius K. Mater. Sci. Eng. C. 19:2002;159.
22. Suemoto T., Tanaka K., Nakajima A., Itukura T. Phys. Rev. Lett. 70:1993;3659.
23. Yorikawa H., Muramatsu S. Appl. Phys. Lett. 71:1997;644.
24. Zhu D., Zheng L., Li X., Zang Y. J. Appl. Phys. 86:1999;692.
25. Aspnes D.E., Studna A.A. Phy. Rev. B. 27:1983;985.
26. Richter H., Wang Z.P., Ley L. Solid State Commun. 39:1981;625.
27. Campbell I.H., Fauchet P.M. Solid State Commun. 58:1986;739.