GaAs nanocrystals fabricated by sequential ion implantation: Structural and luminescence properties

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 322-325

  Kanemitsu, Y ^a   Tanaka, H ^a   Kushida, T ^a   Min, K S ^b   Atwater, H A ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; INFRARED SPECTROSCOPY; ION IMPLANTATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA;

QUANTUM CONFINEMENT;

NANOSTRUCTURED MATERIALS;

EID: 0033702148     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00333-1     Document Type: Article

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