Hot-carrier-induced degradation on 0.1 μm partially depleted silicon-on-insulator complementary metal-oxide-semiconductor field-effect-transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1993-1998

  Yeh, Wen Kuan ^a   Wang, Wen Han ^b   Fang, Yean Kuen ^b   Yang, Fu Liang ^c  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

HCE; Hot carrier induced degradation; Partially depleted SOI; Temperature dependent

Indexed keywords

BAND STRUCTURE; BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; PROBES; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE;

FLOATING BODY EFFECT; HOT CARRIER INDUCED DEGRADATION; PARASITIC BIPOLAR TRANSISTOR EFFECT;

MOSFET DEVICES;

EID: 0037668269     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1993     Document Type: Article

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