Local oxidation induced by inhomogeneous stress on blistered Si surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 4179-4182

  Igarashi, Shinichi ^a,b   Itakura, Akiko N ^a,b   Kitajima, Masahiro ^a,c   Nakano, Shinsuke ^d   Muto, Shunsuke ^d   Tanabe, Tetsuo ^d   Yamamoto, Hiroyuki ^e   Hojou, Kiichi ^e  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d NAGOYA UNIVERSITY   (Japan)

^e JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Auger electron spectroscopy; Finite element method; Ion implantation; Oxidation; Scanning electron microscopy; Silicon; Surface stress

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; FINITE ELEMENT METHOD; ION IMPLANTATION; IRRADIATION; OXIDATION; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACE CHEMISTRY;

ION IRRADIATION; LOCAL PROTRUSION; PATTERNED OXIDATION; SURFACE STRESS;

RESIDUAL STRESSES;

EID: 33646922612     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4179     Document Type: Article

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