Surface stress in thin oxide layer made by plasma oxidation with applying positive bias

Applied Surface Science

Volumn 159, Issue , 2000, Pages 62-66

  Itakura, A N ^a   Narushima, T ^a,b   Kitajima, M ^a   Teraishi, K ^c   Yamada, A ^c   Miyamoto, A ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CANTILEVER BEAMS; COMPOSITE MICROMECHANICS; COMPRESSIVE STRESS; OXIDATION; SEMICONDUCTING FILMS; SILICA; STRESS ANALYSIS; TENSILE STRESS; THERMAL STRESS;

GATE INSULATORS; PLASMA OXIDATION; POSITIVE BIAS VOLTAGE;

SEMICONDUCTING SILICON;

EID: 0034204826     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00055-6     Document Type: Article

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