New inductively coupled plasma-chemical vapor deposition SiO2 passivation for high-voltage switching AlGaN/GaN heterostructure field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3391-3394

  Ha, Min Woo ^a   Lee, Seung Chul ^a   Her, Jin Cherl ^a   Seo, Kwang Seok ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

AlGaN; GaN; HFET; ICP; Passivation; Silicon dioxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; PASSIVATION; SILICA;

ELECTRON INJECTIONS; FORWARD DRAIN CURRENT; PASSIVATED DEVICE; SURFACE STATES;

FIELD EFFECT TRANSISTORS;

EID: 33646911916     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3391     Document Type: Article

References (16)

1. D. Pavlidis: IEDM Tech. Dig., 2005, p. 793.
2. M. Kanamura, T. Kikkawa and K. Joshin: IEDM Tech. Dig., 2005, p. 799.
3. M. Hikita, M. Yanagihara, K. Nakazawa, H. Ueno, Y. Hirose, T. Ueda, Y. Uemoto, T. Tanaka, D. Ueda and T. Egawa: TEDM Tech. Dig., 2005, p. 803.
4. R. Vetury, N. Q. Zhang, S. Keller and U. K. Mishra: IEEE Trans. Electron Devices 48 (2001) 560.
5. G. Koley, V. Tilak, L. F. Eastman and M. G. Spencer: IEEE Trans. Electron Devices 50 (2003) 886.
6. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy and Lester F. Eastman: IEEE Electron Device Lett. 21 (2000) 268.
7. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto and K. Maezawa: IEEE Trans. Electron Devices 50 (2003) 2015.
8. R. Vetury, N. Q. Zhang, S. Keller and U. K. Mishra: IEEE Trans. Electron Devices 48 (2001) 560.
9. V. Adivarahan, G. Simin, J. W. Yang, A. Lunev, M. Asif Khan, N. Pala, M. Shur and R. Gaska: Appl. Phys. Lett. 77 (2000) 863.
10. M. Asif Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaska and M. S. Shur: IEEE Electron Device Lett. 21 (2000) 63.
11. S. Ashida, M. R. Shim and M. A. Lieberman: J. Vac. Sci. Technol. A 14 (1996) 391.
12. M. Goto, H. Toyoda, M. Kitagawa, T. Hirao and H. Sugai: Jpn. J. Appl. Phys. 36 (1997) 3714.
13. R. Vetury, Y.-F. Wu, P. T. Fini, G. Parish, S. Keller, S. P. DenBaars and U. K. Mishra: IEDM Tech. Dig., 2001, p. 55.
14. Z. Lin, H. Kim, J. Lee and W. Lu: Appl. Phys. Lett. 84 (2004) 1585.
15. I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck and U. K. Mishra: J. Appl. Phys. 86 (1999) 4520.
16. J. P. Ibbetson, P. T. Fini, K. D. Ness, S. P. DenBaars, J. S. Speck and U. K. Mishra: Appl. Phys. Lett. 77 (2000) 250.