-
1
-
-
33646891909
-
-
Brügemann, R., Bronner, W., Hierzenberger, A., Schubert, M.B., Zrinscak, I., 1999. Electronic properties of hot-wire CVD and PECVD deposited nanocrystalline silicon. In: Marshall, J.M. (ed.), Thin film materials and devices-developments in science and technology, Singapore, 1-12.
-
-
-
-
2
-
-
0037769611
-
Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry
-
Collins R.W., Ferlauto A.S., Ferreira G.M., Chen C., Koh J., Koval R.J., Lee Y., Pearce J.M., and Wronski C.R. Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry. Solar Energ. Mater. Solar Cells 78 1-4 (2003) 143-180
-
(2003)
Solar Energ. Mater. Solar Cells
, vol.78
, Issue.1-4
, pp. 143-180
-
-
Collins, R.W.1
Ferlauto, A.S.2
Ferreira, G.M.3
Chen, C.4
Koh, J.5
Koval, R.J.6
Lee, Y.7
Pearce, J.M.8
Wronski, C.R.9
-
3
-
-
0347708758
-
Thermal stability of amorphous silicon-carbon alloys deposited by magnetron source
-
Gracin D., Radić N., Desnica U.V., Andreić Z., and Balzar D. Thermal stability of amorphous silicon-carbon alloys deposited by magnetron source. Fizika A 4 2 (1995) 329-335
-
(1995)
Fizika A
, vol.4
, Issue.2
, pp. 329-335
-
-
Gracin, D.1
Radić, N.2
Desnica, U.V.3
Andreić, Z.4
Balzar, D.5
-
4
-
-
0038504778
-
Genetic algorithm approach to thin film optical parameters determination
-
Jurečka S., Jurečková M., and Müllerová J. Genetic algorithm approach to thin film optical parameters determination. Acta Phys. Slovaca 53 3 (2003) 215-221
-
(2003)
Acta Phys. Slovaca
, vol.53
, Issue.3
, pp. 215-221
-
-
Jurečka, S.1
Jurečková, M.2
Müllerová, J.3
-
5
-
-
22144484594
-
The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon
-
Kočka J., Fejfar A., Mates T., Fojtík P., Dohnalová K., Luterová K., Stuchlík J., Stuchlíková H., Pelant I., Rezek B., Stemmer A., and Ito M. The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon. Phys. Status Solidi 1 5 (2004) 1097-1114
-
(2004)
Phys. Status Solidi
, vol.1
, Issue.5
, pp. 1097-1114
-
-
Kočka, J.1
Fejfar, A.2
Mates, T.3
Fojtík, P.4
Dohnalová, K.5
Luterová, K.6
Stuchlík, J.7
Stuchlíková, H.8
Pelant, I.9
Rezek, B.10
Stemmer, A.11
Ito, M.12
-
6
-
-
0000639106
-
Performance and stability of Si:H p-i-n solar cells with i-layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary
-
Koval R.C., Koh J., Lu Z., Jiao L., Collins R.W., and Wronski C.R. Performance and stability of Si:H p-i-n solar cells with i-layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary. Appl. Phys. Lett. 75 11 (1999) 1553-1555
-
(1999)
Appl. Phys. Lett.
, vol.75
, Issue.11
, pp. 1553-1555
-
-
Koval, R.C.1
Koh, J.2
Lu, Z.3
Jiao, L.4
Collins, R.W.5
Wronski, C.R.6
-
7
-
-
33645768814
-
Structural and optical studies of a-Si:H thin films: from amorphous to nanocrystalline silicon
-
Müllerová J., Jurečka J., and Šutta P. Structural and optical studies of a-Si:H thin films: from amorphous to nanocrystalline silicon. Acta Phys. Slovaca 55 3 (2005) 351-359
-
(2005)
Acta Phys. Slovaca
, vol.55
, Issue.3
, pp. 351-359
-
-
Müllerová, J.1
Jurečka, J.2
Šutta, P.3
-
8
-
-
0038245328
-
Extraction of optical parameters of thin films from spectral measurements for design and optical performance of multilayer structures
-
Müllerová J., Jurečka S., and Kučerová A. Extraction of optical parameters of thin films from spectral measurements for design and optical performance of multilayer structures. Acta Phys. Slovaca 53 2 (2003) 111-119
-
(2003)
Acta Phys. Slovaca
, vol.53
, Issue.2
, pp. 111-119
-
-
Müllerová, J.1
Jurečka, S.2
Kučerová, A.3
-
9
-
-
0037113618
-
Correlation between the results of charge deep-level transient spectroscopy and ESR techniques for undoped hydrogenated amorphous silicon
-
Nádaždy V., Durný R., Thurzo I., Pinčík E., Nishida A., Shimizu J., Kumeda M., and Shimizu T. Correlation between the results of charge deep-level transient spectroscopy and ESR techniques for undoped hydrogenated amorphous silicon. Phys. Rev. B 66 (2002) 195211-1-195211-8
-
(2002)
Phys. Rev. B
, vol.66
-
-
Nádaždy, V.1
Durný, R.2
Thurzo, I.3
Pinčík, E.4
Nishida, A.5
Shimizu, J.6
Kumeda, M.7
Shimizu, T.8
-
11
-
-
0035396351
-
Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface
-
Park Y.-B., and Rhee S.-W. Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface. J. Appl. Phys. 90 1 (2001) 217-221
-
(2001)
J. Appl. Phys.
, vol.90
, Issue.1
, pp. 217-221
-
-
Park, Y.-B.1
Rhee, S.-W.2
-
13
-
-
12744258041
-
Metastability in undoped microcrystalline silicon thin films deposited by HWCVD
-
Persheyev S.K., O'Neill K.A., Anthony S., Rose M.J., Smirnov V., and Reynolds S. Metastability in undoped microcrystalline silicon thin films deposited by HWCVD. Mater. Res. Soc. Symp. Proc. 808 (2004) A9101-A9106
-
(2004)
Mater. Res. Soc. Symp. Proc.
, vol.808
-
-
Persheyev, S.K.1
O'Neill, K.A.2
Anthony, S.3
Rose, M.J.4
Smirnov, V.5
Reynolds, S.6
-
14
-
-
15344348756
-
Transport and instabilities in microcrystallline silicon films
-
Reynolds S., Smirnov V., Finger F., Main C., and Carius R. Transport and instabilities in microcrystallline silicon films. J. Optoelectron. Adv. Mater. 7 1 (2005) 91-98
-
(2005)
J. Optoelectron. Adv. Mater.
, vol.7
, Issue.1
, pp. 91-98
-
-
Reynolds, S.1
Smirnov, V.2
Finger, F.3
Main, C.4
Carius, R.5
-
15
-
-
21544455021
-
Reversible Conductivity Changes in Discharge-Produced Amorphous Si
-
Staebler D.L., and Wronski C.R. Reversible Conductivity Changes in Discharge-Produced Amorphous Si. Appl. Phys. Lett. 31 (1977) 292-294
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 292-294
-
-
Staebler, D.L.1
Wronski, C.R.2
-
16
-
-
0035247793
-
Hot-wire amorphous silicon thin-film transistors on glass
-
Stanowski B., and Schropp R.E.I. Hot-wire amorphous silicon thin-film transistors on glass. Thin Solid Films 383 (2001) 125-128
-
(2001)
Thin Solid Films
, vol.383
, pp. 125-128
-
-
Stanowski, B.1
Schropp, R.E.I.2
-
17
-
-
33646862549
-
-
van der Oever, P.J., Houston, I.J., van de Sanden, M.C.M., Kessels, W.M.M.M., 2003. Attenuated total reflection infrared spectroscopic study of hydrogenated amorphous and microcrystalline silicon film evolution. In: Proc. FLTP V, Frontier in Low Temperature Plasma Diagnostics V, Villaggio Cardigliano, Specchia, Italy, 263-265.
-
-
-
-
18
-
-
0034831506
-
Structure of thin polycrystalline silicon films on ceramic substrates
-
van Zutphen A.J.M.M., Šutta P., Tichelaar F.D., von Keitz A., Zeman M., and Metselaar J.W. Structure of thin polycrystalline silicon films on ceramic substrates. J. Cryst. Growth 223 (2001) 332-340
-
(2001)
J. Cryst. Growth
, vol.223
, pp. 332-340
-
-
van Zutphen, A.J.M.M.1
Šutta, P.2
Tichelaar, F.D.3
von Keitz, A.4
Zeman, M.5
Metselaar, J.W.6
-
19
-
-
0001463894
-
Relative importance of Si-Si bond and Si-H bond for the stability of amorphous silicon thin films transistors
-
Wehrspohn R.B., Deane S.C., French I.D., Gale I., Hewett J., and Powell M.J. Relative importance of Si-Si bond and Si-H bond for the stability of amorphous silicon thin films transistors. J. Appl. Phys. 87 1 (2000) 144-154
-
(2000)
J. Appl. Phys.
, vol.87
, Issue.1
, pp. 144-154
-
-
Wehrspohn, R.B.1
Deane, S.C.2
French, I.D.3
Gale, I.4
Hewett, J.5
Powell, M.J.6
-
20
-
-
33646878468
-
-
Wronski, C.R., Pearce, J.M., Koval, R.J., Ferlauto, A.S., Collins, R,W., 2002. Progress in amorphous silicon based solar cell technology. In: Proc. RIO 02-World Climate and Energy Event, 67-72.
-
-
-
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