Transport and instabilities in microcrystalline silicon films

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 1, 2005, Pages 91-98

  Reynolds, S ^a   Smirnov, V ^a   Finger, F ^b   Main, C ^c   Carius, R ^b  

^a UNIVERSITY OF ABERTAY DUNDEE   (United Kingdom)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c UNIVERSITY OF DUNDEE   (United Kingdom)

Author keywords

Defects; Degradation; Macrocrystalline silicon; Transient photoconductivity

Indexed keywords

CRYSTALLINE FILMS; ELECTRONIC MODELS; MICROCRYSTALLINE SILICON; TRANSIENT PHOTOCONDUCTIVITY;

ADSORPTION; ANISOTROPY; CARRIER MOBILITY; DEFECTS; DEGRADATION; FILM GROWTH; MATHEMATICAL MODELS; OXIDATION; PHOTOCONDUCTIVITY; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SOLAR CELLS;

THIN FILMS;

EID: 15344348756     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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