Correlation between the results of charge deep-level transient spectroscopy and ESR techniques for undoped hydrogenated amorphous silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 19, 2002, Pages 1952111-1952118

  Nadazdy V ^a   Durn R ^b   Thurzo, I ^a   Pincik E ^a   Nishida, A ^c   Shimizu, J ^d   Kumeda, M ^d   Shimizu, T ^d  

^a INSTITUTE OF PHYSICS   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c FUKUOKA UNIVERSITY   (Japan)

^d KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON;

ARTICLE; CRYSTALLIZATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON SPIN RESONANCE; ENERGY; MATHEMATICAL ANALYSIS; MEASUREMENT; MODEL; SPECTROSCOPY; TEMPERATURE;

EID: 0037113618     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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