Remote plasma chemical vapour deposition of silicon films at low temperature with H2 and He plasma gases

Journal of Physics D: Applied Physics

Volumn 32, Issue 16, 1999, Pages 1955-1962

  Park, Young Bae ^a   Li, Xiaodong ^b,d   Rhee, Shi Woo ^b   Park, Dong Wha ^c  

^a SAMSUNG Electronics   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Inha University   (South Korea)

^d The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HELIUM; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ARGON PLASMA PROCESS; CRYSTALLIZATION MECHANISMS; DEPOSITION RATE; FILM GROWTH KINETICS; FILM SURFACE REACTION; GAS PHASE SPECIES; HYDROGEN PLASMA GASES; OPTICAL BAND GAP; PENNING IONIZATION PROCESS;

SEMICONDUCTING SILICON;

EID: 0032593296     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/16/302     Document Type: Article

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