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Volumn 274, Issue 3-4, 2005, Pages 402-406
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Effects of Nb doping on highly fatigue-resistant thin films of (Pb 0.8Ba0.2)ZrO3 for ferroelectric memory application
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Author keywords
A1. Doping; A3. Polycrystalline deposition; B1. Oxides; B2. Ferroelectric materials
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Indexed keywords
ANNEALING;
DEPOSITION;
ELECTRODES;
FATIGUE OF MATERIALS;
FERROELECTRIC MATERIALS;
LEAD COMPOUNDS;
LEAKAGE CURRENTS;
MAGNETRON SPUTTERING;
NIOBIUM;
OXIDES;
POLARIZATION;
POLYCRYSTALLINE MATERIALS;
SWITCHING;
THIN FILMS;
ZIRCONIUM COMPOUNDS;
FATIGUE-RESISTANCE;
FERROELECTRIC MEMORY (FERAM);
POLYCRYSTALLINE DEPOSITION;
POSTANNEALING (PA);
DOPING (ADDITIVES);
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EID: 12244272456
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.10.013 Document Type: Article |
Times cited : (7)
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References (17)
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