Forming gas annealing on physical characteristics and electrical properties of Sr0.8Bi2Ta2O9/Al 2O3/Si capacitors

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1877-1881

  Lan, Bang Chiang ^a   Hsu, Jung Jui ^a   Chen, San Yuan ^a   Bow, Jong Shing ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; DIFFUSION; LEAKAGE CURRENTS; PERMITTIVITY;

FORMING GAS ANNEALING (FGA);

FERROELECTRIC THIN FILMS;

EID: 0043013033     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1588362     Document Type: Article

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