Simulation of flexoelectricity effect on imprint behavior of ferroelectric thin films

Solid State Communications

Volumn 138, Issue 8, 2006, Pages 404-408

  Cao, Hai Xia ^a,b   Lo, Veng Cheong ^a   Li, Zhen Ya ^b,c  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b SOOCHOW UNIVERSITY   (China)

^c CCAST WORLD LABORATORY   (China)

Author keywords

A. Flexoelectricity; D. Imprint; D. Landau Khalatnikov theory

Indexed keywords

COMPRESSIVE STRENGTH; COMPUTER SIMULATION; ELECTRIC FIELDS; FERROELECTRIC MATERIALS; POLARIZATION;

FLEXOELECTRICITY; IMPRINT; LANDAU-KHALATNIKOV THEORY;

THIN FILMS;

EID: 33646799441     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2006.03.031     Document Type: Article

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