Nonswitching layer model for voltage shift phenomena in heteroepitaxial barium titanate thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 10, 2002, Pages 6065-6071

  Abe, Kazuhide ^a   Yanase, Naoko ^a   Yasumoto, Takaaki ^a   Kawakubo, Takashi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Barium titanate; BaTiO3; Epitaxial growth; Ferroelectricity; Hysteresis loop; Lattice misfit; Thin film capacitor; Voltage shift

Indexed keywords

BARIUM TITANATE; CAPACITORS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FERROELECTRICITY; INTERFACES (MATERIALS);

HYSTERESIS LOOP; NONSWITCHING LAYER; THIN FILM CAPACITOR; VOLTAGE SHIFT PHENOMENA;

THIN FILMS;

EID: 0036818519     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.6065     Document Type: Article

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