Imprint in ferroelectric capacitors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1521-1524

  Warren, William L ^a   Tuttle, Bruce A ^a   Dimos, Duane ^a   Pike, Gordon E ^a   Al Shareef, Husam N ^a   Ramesh, Ramamoorthy ^b   Evans Jr , Joseph T ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c Radiant Technologies Incorporated   (United States)

Author keywords

Defects; Ferroelectrics; Imprint; Polarization voltage; PZT; Thin film

Indexed keywords

CAPACITORS; COMPOSITION EFFECTS; DEFECTS; DOPING (ADDITIVES); FERROELECTRIC DEVICES; LEAD COMPOUNDS; POLARIZATION; THIN FILMS;

COMPOSITIONAL DEPENDENT OXYGEN VACANCY DENSITY; FERROELECTRIC CAPACITORS; FERROELECTRIC MEMORY DEVICES; IMPRINT; OXYGEN VACANCY RELATED DEFECT DIPOLE; POLARIZATION VOLTAGE CHARACTERISTICS; STRESS INDUCED VOLTAGE SHIFT; THERMAL INDUCED VOLTAGE SHIFT; VOLTAGE OFFSET;

FERROELECTRIC MATERIALS;

EID: 0030079758     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1521     Document Type: Article

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