Ultralow threshold long wavelength single-mode quantum dot VCSELs on GaAs substrates

IET Conference Publications

Volumn 2005, Issue CP502, 2005, Pages 305-306

  Moller C ^a   Mikhrin, S S ^a   Kozhukhov, A V ^a   Krestnikov, I L ^a   Livshits, D A ^a   Kovsh, A R ^a   Ledentsov, N N ^a   Hensel, H J ^b   Molzow, W D ^b   Gibis, R ^b   Schmidt, D ^b   Paraskevopoulos, A ^b  

^a NL Nanosemiconductor GmbH   (Germany)

^b FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; NANOCRYSTALS; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM; SURFACE EMITTING LASERS;

GAAS; GAAS SUBSTRATES; LONG WAVELENGTH; OXIDE APERTURE; SINGLE MODE; ULTRA-LOW THRESHOLD; ULTRALOW THRESHOLD CURRENTS; WAVELENGTH RANGES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84951000822     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/cp:20050490     Document Type: Conference Paper

References (3)

1. S. S. Mikhrin et al, High power temperatureinsensitive 1. 3m InAs/InGaAs/GaAs quantum dot laser. Semicond. Sci. Technol. 20 (2005), 340-2
2. A. R. Kovsh et al, InAs/InGaAs/GaAs quantum dot lasers of 1. 3m range with high (88%) differential efficiency. Electron. Lett. 38 (2002), 1104-6
3. J. A. Lott et al, Multiple stacks of InAs-InGaAs quantum dots for GaAs-based vertical-cavity surface-emitting laser applications. Extended Abstracts, LEOS-2003, 26-30 October 2003, Tucson, Arizona, pp. 499-500