Schottky barrier formation at nonpolar Au/GaN epilayer interfaces

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 581-586

  Walker Jr , D E ^a   Gao, M ^a   Chen, X ^b   Schaff, W J ^b   Brillson, L J ^a,c  

^a The Ohio State University   (United States)

^b Cornell University   (United States)

^c OHIO STATE UNIVERSITY   (United States)

Author keywords

Ag; Au; Auger electron spectroscopy; Band bending; Cleave; GaN; Nonpolar; Schottky barrier; Secondary electron; Work function

Indexed keywords

BAND BENDING; CLEAVE; EPILAYER INTERFACES; NONPOLAR; SECONDARY ELECTRON; WORK FUNCTION;

AUGER ELECTRON SPECTROSCOPY; GALLIUM NITRIDE; GOLD; ION BEAMS; METALLIZING; PIEZOELECTRICITY; SCHOTTKY BARRIER DIODES; SILVER;

INTERFACES (MATERIALS);

EID: 33646720521     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0103-3     Document Type: Conference Paper

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