Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Di, Zengfeng ^a,e   Chu, Paul K ^a   Zhu, Ming ^a,e   Fu, Ricky K Y ^a   Luo, Suhua ^a,e   Shao, Lin ^b   Nastasi, M ^b   Chen, Peng ^c   Alford, T L ^d   Mayer, J W ^d   Zhang, Miao ^e   Liu, Weili ^e   Song, Zhitang ^e   Lin, Chenglu ^e  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Arizona State University   (United States)

^e SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL TEMPERATURE; INSULATOR INTERFACES; ION CUTTING; NEGATIVE DIFFERENTIAL RESISTANCE;

DIAMOND LIKE CARBON FILMS; HEATING; INTERFACES (MATERIALS); MICROELECTRONICS; SILICON ON INSULATOR TECHNOLOGY;

ELECTRIC INSULATORS;

EID: 33646707083     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2192981     Document Type: Article

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