Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Di, Zengfeng ^a,c   Huang, Anping ^a   Fu, Ricky K Y ^a   Chu, Paul K ^a   Shao, Lin ^b   Hochbauer T ^b   Nastasi, M ^b   Zhang, Miao ^c   Liu, Weili ^c   Shen, Qinwo ^c   Luo, Suhua ^c   Song, Zhitang ^c   Lin, Chenglu ^c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; GRAPHITIZATION PROCESS; NANOCRYSTALLINE GRAPHITE; SILICON ON DIAMOND (SOD);

CHEMICAL BONDS; DEPOSITION; GRAPHITE; ION IMPLANTATION; PHASE TRANSITIONS; SILICON ON INSULATOR TECHNOLOGY; THERMODYNAMIC STABILITY;

DIAMOND LIKE CARBON FILMS;

EID: 25144449556     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2034651     Document Type: Article

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