Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 901-906

  Zhu, Ming ^a,b   Chen, Peng ^a   Fu, Ricky K Y ^a   An, Zhenghua ^c   Lin, Chenglu ^b   Chu, Paul K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Aluminum nitride (AlN); Numerical simulation; Self heating effect; Silicon on insulator (SOI)

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC PROPERTIES; NUMERICAL METHODS; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS;

CHANNEL TEMPERATURE; SELF HEATING EFFECTS;

MOSFET DEVICES;

EID: 2942650711     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.827362     Document Type: Article

References (14)

1. M. Yoshimi, H. Hazama, M. Takahashi, S. Kambayashi, T. Wada, K. Kato, and H. Tango, "Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film," IEEE Trans. Electron Devices, vol. 36, pp. 493-503, Mar. 1989.
2. M. B. Kleiner, S. A. Kuhn, and W. Weber, "Thermal conductivity of thin silicon dioxide films in integrated circuits," in Proc. Eur. Solid-State Dev. Research Conf., 1995, pp. 122-123.
3. Q. Lu, P. Ratnam, C. Andre and T. Salama, "High voltage silicononinsulator (SOI) MOSFETs," in Proc. ISPSD, 1991, pp. 36-39.
4. I. J. Kim, S. Matsumoto, T. Sakai, and T. Yachi, "Analytical approach to breakdown voltages in thin-film SOI power MOSFETs," Solid-State Electron., vol. 39, pp. 95-100, 1996.
5. F. Udrea, W. Milne, and A. Popescu, "Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology," Electron. Lett., vol. 33, pp. 907-909, 1997.
6. C. L. Men, Z. Xu, Z. H. An, P. K. Chu, Q. Wan, X. Y. Xie, and C. L. Lin, "Fabrication of SOI structure with AlN film as buried insulator by ion-cut process," Appl. Surf. Sci., vol. 199, pp. 287-292, 2002.
7. Medici User's Manual. version 2000.2.
8. R. Awaldallah and J. S. Yuan, "A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect," Int. J. Electron., vol. 86, pp. 707-712, 1999.
9. Z. Yu and R. W. Dutton, "SEDAN III - A generalized electronic material device analysis program," Stanford Univ., Stanford, CA, Stanford Electron. Lab. Tech. Rep., 1985.
10. S. Selberherr, Analysis and Simulation of Semiconductor Devices. New York: Springer-Verlag, 1984.
11. B. A. Biegel, M. A. Osman, and Z. P. Yu, "Analysis of aluminum-nitride SOI for high-temperature electronics," in Proc. High Temperature Electronics Conf., June 11-15, 2000.
12. L. J. McDaid, S. Hall, P. H. Mellor, W. Eccleston, and J. C. Alderman, "Physical origin of negative differential resistance in SOI transistors," Electron. Lett., vol. 25, pp. 827-828, 1989.
13. P. Francis, J. P. Colinge, and D. Flandge, "Comparison of self-heating effect in GAA and SOI MOSFETs," Microelectron. Reliab., vol. 37, pp. 61-75, 1997.
14. M. C. Hu and S. L. Jang, "An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source-drain resistance," IEEE Trans. Electron Devices, vol. 45, pp. 797-801, Apr. 1998.