Modeling for the 2nd-Bit Effect of a Nitride-Based Trapping Storage Flash EEPROM Cell Under Two-Bit Operation

IEEE Electron Device Letters

Volumn 25, Issue 2, 2004, Pages 95-97

  Chang, Yao Wen ^a   Lu, Tao Cheng ^a   Pan, Sam ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

2nd bit effect; EEPROM; Flash memory; Macromodel; Multiple virtual ground AND (MXVAND); Nitride based trapping storage; NROM

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; EMBEDDED SYSTEMS; FLASH MEMORY; MATHEMATICAL MODELS; MOSFET DEVICES; NITRIDES; TRANSCONDUCTANCE;

NITRIDE-BASED TRAPPING STORAGE; PROGRAMMED ELECTRONS;

PROM;

EID: 1342308176     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.822671     Document Type: Article

References (6)

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