Degradation of current drivability by the increase of Zr concentrations in Zr-silicate MISFET

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 663-666

  Yamaguchi, Takeshi ^a   Satake, Hideki ^a   Fukushima, Noburu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIELECTRIC FILMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MOBILITY; INTERFACES (MATERIALS); LASER ABLATION; PERMITTIVITY; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON; SILICATES; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIUM;

CURRENT DRIVABILITY; INTERFACE PROPERTIES; INTERFACE STATE DENSITY; LOW IMPACT PULSED LASER ABLATION DEPOSITION; X RAY PHOTOEMISSION SPECTROSCOPY;

MISFET DEVICES;

EID: 0035714649     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)