Multi-level charge storage in source-side injection flash EEPROM

Biennial IEEE International Nonvolatile Memory Technology Conference

Volumn , Issue , 1996, Pages 80-83

  Montanari, D ^a   Van Houdt, J ^a   Wellekens, D ^a   Vanhorebeek, G ^a   Haspeslagh, L ^a   Deferm, L ^a   Groeseneken, G ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER PROGRAMMING; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE;

CHANNEL CAPABILITY; CHANNEL HOT ELECTRON INJECTION; FLASH EEPROM; FOWLER-NORDHEIM TUNNELING; HIGH DENSITY FLASH MEMORIES; MULTILEVEL CHARGE STORAGE TECHNIQUES; READ OUT ARCHITECTURE; SOURCE SIDE INJECTION; THESHOLD VOLTAGE DISTRIBUTIONS;

NONVOLATILE STORAGE;

EID: 0029708348     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)