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Applied Physics A: Materials Science and Processing

Volumn 76, Issue 6, 2003, Pages 979-982

Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0. 4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

(6) Yu, J S a Song, J D a Kim, J M a Bae, S J a Lee, Y T a Lim, H b

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Ajou University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM COMPOUNDS; SILICA;

HETEROINTERFACES;

QUANTUM WELL LASERS;

EID: 0037387701 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-002-1978-3 Document Type: Conference Paper

Times cited : (2)

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