Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 442-445

  Cordier, Y ^a   Ferre, D ^b   Chauveau, J M ^b   Dipersio, J ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X RAY DIFFRACTION;

SEMICONDUCTING FILMS;

EID: 0034300181     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00465-7     Document Type: Article

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