Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates

Semiconductors

Volumn 37, Issue 9, 2003, Pages 1104-1106

  Semenova, E S ^a   Zhukov, A E ^a   Vasil'ev, A P ^a   Mikhrin, S S ^a   Kovsh, A R ^a   Ustinov, V M ^a   Musikhin, Yu G ^a   Blokhin, S A ^a   Gladyshev, A G ^a   Ledentsov, N N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141637144     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1610128     Document Type: Article

References (6)

1. L. D. Nguyen, L. E. Larson, and U. K. Mishra, Proc. IEEE 80, 494 (1992).
2. W. E. Hoke, P. J. Lemonias, and J. J. Mosca, J. Vac. Sci. Technol. B 17, 1131 (1999).
3. M. Zaknoune, B. Bonte, and C. Gaquiere, IEEE Electron Device Lett. 19 (9), 345 (1998).
4. G. Wang, Y. Chen, and W. J. Scha, IEEE Trans. Electron Devices 35, 818 (1988).
5. M. Behet, K. van der Zanden, and G. Borghs, Appl. Phys. Lett. 73, 2760 (1998).
6. T. Mishima, K. Higuchi, and M. Mori, J. Cryst. Growth 150, 1230 (1995).