Optimization of compositionally graded InxGa1-xP metamorphic buffer layers grown by solid source molecular beam epitaxy

Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 637-640

  Yuan, K ^a   Radhakrishnan, K ^a   Zheng, H Q ^a   Yoon, S F ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Graded buffer; Photoluminescence; Solid source MBE; X ray diffraction

Indexed keywords

CRYSTAL LATTICES; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

STRAIN RELAXATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035575386     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00033-1     Document Type: Conference Paper

References (13)

1. 1-xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs
2. Optical properties of InGaAs linear graded buffer layers on GaAs grown by metalorganic chemical vapor deposition
3. Design of InGaAs linear graded buffer structures
4. 1-yAs HEMTs grown lattice-mismatched on GaAs substrates
5. 1-xAs epilayers grown on GaAs substrates
6. X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers
7. 1-x-yAs buffer layers on GaAs
8. Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications
9. Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
10. InGaAs/InP and InAsP/InP quantum well structures on GaAs (1 0 0) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy
11. 1-xP graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials
12. 0.8As/GaAs high electron mobility transistor structures
13. xP/GaAs grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy