Observation of phase separation and ordering in the InAlAs epilayer grown on InP at the low temperature

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 64, Issue 3, 1999, Pages 174-179

  Cho, H K ^a   Lee, J Y ^a   Kwon, M S ^a   Lee, B ^b   Baek, J H ^b   Han, W S ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

DOUBLE-CRYSTAL X RAY DIFFRACTION (DCXRD) ANALYSIS; FULL WIDTH AT HALF MAXIMUM (FWHM); INDIUM ALUMINUM ARSENIDE;

SEMICONDUCTING FILMS;

EID: 0033313499     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00179-8     Document Type: Article

References (18)

1. Alexandre F., Goldstein L., Leroux G., Joncour M.C., Thibierge H., Rao E.V.K. J. Vac. Sci. Technol. B. 3:1985;950.
2. Chou S.T., Cheng K.Y. Appl. Phys. Lett. 63:1993;2815.
3. Wood C.E.C., Morgan D.V., Rathbun L. J. Appl. Phys. 53:1982;4524.
4. Tournie E., Zhang Y.-H., Pulsford N., Ploog K. J. Appl. Phys. 70:1991;7362.
5. Jun S.W., Seong T.-Y., Lee J.H., Lee B. Appl. Phys. Lett. 68:1996;3443.
6. Phillips B.A., Norman A.G., Seong T.Y., Mahajan S., Booker G.R., Skowronski M., Harbison J.P., Keramidas V.G. J. Cryst. Growth. 140:1994;249.
7. Su L.C., Ho I.H., Kobayashi N., Stringfellow G.B. J. Cryst. Growth. 145:1994;140.
8. Han W.S., Lee B., Baek J.H., Lee J.-H., Jung B.S., Lee E.-H. Appl. Phys. Lett. 72:1998;1905.
9. Lee K., Philips B.A., McFadden R.S., Mahajan S. Mater. Sci. Eng. B. 32:1995;231.
10. LaPierre R.R., Okada T., Robinson B.J., Thompson D.A., Weatherly G.C. J. Cryst. Growth. 155:1995;1.
11. Oh J.E., Bhattacharya P.K., Chen Y.C., Aina O., Mattingly M. J. Electron. Mater. 19:1990;435.
12. Follstaedt D.M., Schneider R.P. Jr., Jones E.D. J. Appl. Phys. 77:1995;3077.
13. Stringfellow G.B. J. Appl. Phys. 54:1983;404.
14. Matthews J.W., Blakeslee A.E. J. Cryst. Growth. 27:1974;118.
15. Swaminathan V., Macrander A.T. Materials Aspects of GaAs and InP Based Structure. 1991;186 Prentice-Hall, New Jersey.
16. Wakefield B., Halliwell M.A.G., Kerr T., Andrews D.A., Davies G.J., Wood D.R. Appl. Phys. Lett. 44:1984;341.
17. Kamei H., Hashizume K., Murata M., Kuwata N., Ono K., Yoshida K. J. Cryst. Growth. 93:1988;329.
18. Won-Jin Choi, Jong-Seok Kim, Hyun-Chul Ko, Ki-Woong Chung, and Tae-Kyung Yoo, J. Appl. Phys., 77 (1995) 3111.