SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 391, Issue 1, 2001, Pages 36-41

Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction

(5) Yuan, K a Radhakrishnan, K a Zheng, H Q a Zhuang, Q D a Ing, G I a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

Gallium arsenide; Indium phosphide; Molecular beam epitaxy (MBE); X Ray diffraction

Indexed keywords

ANISOTROPY; EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BRAGG DIFFRACTION ANALYSIS; FULL WIDTH AT HALF MAXIMUM (FWHM); SOLID-SOURCE MOLECULAR BEAM EPITAXY; STRAIN RELAXATION ANISOTROPY;

SEMICONDUCTING FILMS;

EID: 0035797018 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)00966-X Document Type: Article

Times cited : (23)

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