Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm

Journal of Crystal Growth

Volumn 269, Issue 2-4, 2004, Pages 242-248

  Cao, X A ^a   Yan, C H ^b   D'Evelyn, M P ^a   LeBoeuf, S F ^a   Kretchmer, J W ^a   Klinger, R ^a   Arthur, S D ^a   Merfeld, D W ^a  

^a GE GLOBAL RESEARCH   (United States)

^b AXT Optoelectronics   (United States)

Author keywords

A3. Homoepitaxy; B1. InGaN; B1.GaN; B3. Electroluminescence; B3. Light emitting diode

Indexed keywords

EPITAXIAL GROWTH; HEAT LOSSES; LIGHT EMISSION; LIGHT EMITTING DIODES; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

HETEROEPITAXY; HOMOEPITAXY; INGAN;

GALLIUM NITRIDE;

EID: 4344646194     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.065     Document Type: Article

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