Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN

Journal of Crystal Growth

Volumn 246, Issue 3-4, 2002, Pages 244-251

  Myers, T H ^a   VanMil, B L ^a   Holbert, L J ^a   Peng, C Y ^b   Stinespring, C D ^b   Alam, J ^c   Freitas Jr , J A ^d   Dmitriev, V A ^e   Pechnikov, A ^e   Shapovalova, Y ^e   Ivantsov, V ^e  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b West Virginia University   (United States)

^c Howard University   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

^e Technologies and Devices International Inc   (United States)

Author keywords

A1. Etching; B1. Nitrides; B2. Semiconducting III IV compounds

Indexed keywords

ANNEALING; ETCHING; HIGH TEMPERATURE EFFECTS; HYDROGEN; MORPHOLOGY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SURFACE PHENOMENA;

MECHANICAL POLISHING;

GALLIUM NITRIDE;

EID: 0037121671     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01748-7     Document Type: Conference Paper

References (8)

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