The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 494-497

  Wu, Donghai ^a   Niu, Zhichuan ^a   Zhang, Shiyong ^a   Ni, Haiqiao ^a   He, Zhenhong ^a   Sun, Zheng ^a   Han, Qin ^a   Wu, Ronghan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ANTIMONY; ELECTRON DIFFRACTION; GALLIUM COMPOUNDS; NITRIDES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY;

HIGH-ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING III-V MATERIALS; THREE-DIMENSIONAL GROWTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33646348178     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.002     Document Type: Article

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