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Volumn 87, Issue 16, 2005, Pages 1-3

High structural and optical quality 1.3 μm GaInNAsGaAs quantum wells with higher indium content grown by molecular-beam expitaxy

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 28344440009     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2108117     Document Type: Article
Times cited : (9)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.