Phosphorus ion implantation into 4H-SiC (0001) and (1120)

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 783-786

  Negoro, Yuuki ^a   Miyamoto, Nao ^a   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

4H SiC (1120) plane; P+lmplantation

Indexed keywords

ANNEALING; ION IMPLANTATION; IONS; PHOSPHORUS; SHEET RESISTANCE; CRYSTALLIZATION; ELECTRIC RESISTANCE;

4H-SIC (1120) PLANE; C IMPLANTATIONS; FLAT SURFACES; HIGH-DOSE ION IMPLANTATION; PHOSPHORUS ION IMPLANTATIONS; TEMPERATURE IMPLANTATION; SHEET RESISTANCE;

SILICON CARBIDE;

EID: 0036435364     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.783     Document Type: Conference Paper

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