Electrical properties of high-dose nitrogen-implanted and rapid thermal annealed 6H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 960-964

  Abe, K ^a   Eryu, O ^a   Kogi, O ^a   Nakashima, K ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CAICISS; Ion implantation; Rapid thermal annealing; SiC; SIMS

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLIZATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SURFACE ROUGHNESS; THERMAL CONDUCTIVITY OF SOLIDS;

SHEET RESISTANCE;

ION IMPLANTATION;

EID: 0038242437     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00902-9     Document Type: Conference Paper

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