Micro-structural and electrical properties of Al-implanted & Lamp-annealed 4H-SiC

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 807-810

  Nakamura, H ^a   Watanabe, H ^a   Yamazaki, J ^b   Tanaka, N ^b   Malhan, R K ^a  

^a DENSO CORPORATION   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Acceptor; Aluminum; Defects; Ion implantation; Lamp annealing; Surface morphology

Indexed keywords

ALUMINUM; ANNEALING; CRYSTAL ATOMIC STRUCTURE; DEFECTS; ION IMPLANTATION; LEAKAGE CURRENTS; MORPHOLOGY; SURFACE MORPHOLOGY; ELECTRIC RESISTANCE; MICROSTRUCTURE; REACTION KINETICS; SURFACES;

ACCEPTOR; DENSITY OF DISLOCATION; DISLOCATION LOOP; FORMATION KINETICS; INTERSTITIAL ATOMS; LAMP ANNEALING; MICRO-STRUCTURAL; STRONG DEPENDENCES; SHEET RESISTANCE;

SILICON CARBIDE;

EID: 0036431160     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.807     Document Type: Conference Paper

References (4)

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2. J R. Kumar, J. Kozima and T. Yamamoto: Int. Conf. on Solid State Devices and Materials, Tokyo, 1999.
3. P. O. A. Persson, W. Skorupa, D. Panknin, A. Kuznetsov, A. Hallen and L. Hultman: MRS Fall Meeting, Boston, 2000.
4. T. ohno and N. Kobayashi: Int. Conf. on SiC and Related Materials, NC, 1999.